MEASUREMENTS OF THE AVERAGE ENERGY PER ELECTRON-HOLE PAIR GENERATION IN SILICON BETWprEEN 5-32O0K(
نویسنده
چکیده
The average energy exDended to create an electron-hole pair in silicon ESi(T) has been measured in the 5-3200K temperature range with thin totally depleted surface barrier and diffused junction radiation detectors. The data have been normalized to a value of ESi (3000K) = 3.62 eV. A dependence of ESi on T much weaker than previously published by other authors has been observed. In the examined temperature range (5-3200K) our data are well fitted by Es.(T) = 2.15 Eg(T) + 1.21 eV where Eg(T) tin eV) is the value of the forbidden bandgap.
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